Singular soliton,shock-wave,breather-stripe soliton,hybrid solutions and numerical simulations for a (2+1)-dimensional Caudrey–Dodd–Gibbon–Kotera–Sawada system in fluid mechanics

Nonlinear Dynamics - In this paper, a (2+1)-dimensional Caudrey–Dodd–Gibbon–Kotera–Sawada system is investigated in fluid mechanics via the symbolic computation. With the...     

Quantum algorithm for neighborhood preserving embedding

Neighborhood preserving embedding (NPE) is an important linear dimensionality reduction technique that aims at preserving the local manifold structure. NPE contains three steps, i.e., finding the nearest neighbors of each data point, constructing the weight matrix, and obtaining the transformation matrix. Liang et al. proposed a variational quantum algorithm (VQA) for NPE [Phys. Rev. A 101 032323 (2020)]. The algorithm consists of three quantum sub-algorithms, corresponding to the three steps of NPE, and was expected to have an exponential speedup on the dimensionality n. However, the algorithm has two disadvantages: (i) It is not known how to efficiently obtain the input of the third sub-algorithm from the output of the second one. (ii) Its complexity cannot be rigorously analyzed because the third sub-algorithm in it is a VQA. In this paper, we propose a complete quantum algorithm for NPE, in which we redesign the three sub-algorithms and give a rigorous complexity analysis. It is shown that our algorithm can achieve a polynomial speedup on the number of data points m and an exponential speedup on the dimensionality n under certain conditions over the classical NPE algorithm, and achieve a significant speedup compared to Liang et al.'s algorithm even without considering the complexity of the VQA.     

Scalable Quantum Controlled Gates on Single-Photon Polarization Qubits Assisted by Nitrogen-Vacancy Centers Inside Single-Sided Optical Cavities

International Journal of Theoretical Physics - Quantum logic gates are the foundation of circuit-based quantum computation and quantum simulation. Multi-qubit quantum controlled gates are of vital...     

Synchronization mechanism of clapping rhythms in mutual interacting individuals

In recent years, clapping synchronization between individuals has been widely studied as one of the typical synchronization phenomena. In this paper, we aim to reveal the synchronization mechanism of clapping interactions by observing two individuals’ clapping rhythms in a series of experiments. We find that the two synchronizing clapping rhythm series exhibit long-range cross-correlations(LRCCs);that is, the interaction of clapping rhythms can be seen as a strong-anticipation process. Previous studies have demonstrated that the interactions in local timescales or global matching in statistical structures of fluctuation in long timescales can be sources of the strong-anticipation process. However, the origin of the strong anticipation process often appears elusive in many complex systems. Here, we find that the clapping synchronization process may result from the local interaction between two clapping individuals and may result from the more global coordination between two clapping individuals. We introduce two stochastic models for mutually interacting clapping individuals that generate the LRCCs and prove theoretically that the generation of clapping synchronization process needs to consider both local interaction and global matching. This study provides a statistical framework for studying the internal synchronization mechanism of other complex systems. Our theoretical model can also be applied to study the dynamics of other complex systems with the LRCCs, including finance, transportation, and climate.     

苗族服饰色彩体系构建研究

色彩是民族服饰的核心要素，也是民族文化元素的重要组成部分，构建一套兼具科学性与实用性的色彩体系极具挑战性。在传统色彩地理学方法基础上，通过提取主题色和改进的关联规则挖掘方法，获取色彩数据、寻找色彩规则，并对其进行自然色彩体系（NCS）编谱分析，构建了一套苗族服饰色彩体系（Miao’s costume color system,MCCS）。该体系有助于进一步挖掘苗族服饰的配色规律，实现对苗族服饰色彩的数字化保护，为民族服饰色彩传承机理的探索与研究提供新的思路。     

Electronic and optical properties of Ho-doped BYF crystal

First-principles methods have been applied to explore the electronic and optical properties of BYF single crystals heavily doped with the Ho³⁺ ion (16.33 and 30.36 mol%). The electronic properties calculations manifest that the top of the valence band is dominated by 2p-orbitals of the F atoms and 4f-orbitals of the Ho atoms. The new defect states are dominated by 4f-orbitals of the Ho atoms which exist in the forbidden band. The principal absorptionat around 5.13 eV (241.7 nm) and 5.75 eV (215.7 nm) occurs in ultra-violet range owing to the electronic transitions from the occupied 2p-orbitalsof the F atoms as well as 4f-orbitals of the Ho atoms to empty 4f-orbitals of neighboring Ho atoms. Moreover, the influence of crystal field will split the energy levels of rare earth ions and easily release the parity forbidden condition of free rare earth ions resulting in f-f transition. Therefore, there may be a 2 μm luminescence in the Ho-doped BYF crystal.     

Fault Tolerant Multi-Party Authenticated Quantum Conference Against Collective Noise

International Journal of Theoretical Physics - With the advent of new science and technology, teleconference, which allows multiple participants to communicate directly without being constrained by...     

The impact of asymptomatic individuals on the strength of public health interventions to prevent the second outbreak of COVID-19

Nonlinear Dynamics - The pandemic of coronavirus disease 2019 (COVID-19) has threatened the social and economic structure all around the world. Generally, COVID-19 has three possible transmission...     

Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO₂ mask on the thermal stress are studied. It is found that the SiO₂ mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO₂ mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.